An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Elevator Spare Parts
Mitsubishi Power Driver Module IGBT 3 Phase – PM75RLA120
IGBT modules are widely used for speed regulation, voltage regulation and other purposes. It has a very low on-state voltage drop due to conductivity modulation and has superior on-state current density. IGBTs are used for inverter applications with a switching frequency of less than 20 kHz requiring high overload endurance.
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